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Your search returned 37 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 12 |
A Novel Temperature-Dependent Large-Signal Model Of Heterojunction Bipolar Transistor With A Unified Approach For Self-Heating And Ambient Temperature Effects
(Article)
Subject:
Compound Semiconductor Devices
Author:
H.M
Park
page:
2099
-
2106
A Study Of Low-Bias Photocurrent Gradient Of Avalanche Photodiodes
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
S
Wang
page:
2107
-
2113
Boundary Effects On Multiplication Noise In Thin Heterostructure Avalanche Photodiodes: Theory And Experiment
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
M M
Hayat
page:
2114
-
2123
Design Of An Organic Pixel Addressing Circuit For An Active-Matrix Olded Display
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
W. F.
Aerts
page:
2124
-
2130
On The Weibull Shape Factor Of Intrinsic Breakdown Of Dielectric Films And Its Accurate Experimental Determination Part I: Theory, Methodology, Experimental Techniques
(Article)
Subject:
Reliability
Author:
Y
Wu
R. P
Vollertsen
page:
2131
-
2140
On The Weibull Shape Factor Of Intrinsic Breakdown Of Dielectric Films And Its Accurate Experimental Determination Part Ii: Experimental Results And The Effects Of Stress Conditions
(Article)
Subject:
Reliability
Author:
J
Sune
page:
2141
-
2150
A New 'Mixed-Mode' Reliability Degradation Mechanism In Advanced Si And Sige Bipolar Transistors
(Article)
Subject:
Reliability
Author:
G
Zhang
page:
2151
-
2156
Hot-Carrier-Induced Degradation For Partially Depleted Soi 0.25-0.1 Um Cmosfet With 2-Nm Thin Gate Oxide
(Article)
Subject:
Reliability
Author:
W. K.
Yeh
page:
2157
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2162
Effect Of Cf4 Plasma Pretreatment On Low Temperature Oxides
(Article)
Subject:
Reliability
Author:
Y. T
Chang
page:
2163
-
2171
Analysis Of Nonuniform Esd Current Distribution In Deep Submicron Nmos Transtor
(Article)
Subject:
Silicon Devices
Author:
K. H.
Oh
page:
2171
-
2182
Impact Of Gate-To-Contact Spacing On Esd Performance Of Salicided Deep Submicron Nmos Transistors
(Article)
Subject:
Silicon Devices
Author:
K. H.
Oh
page:
2183
-
2192
Closed-Form Analytical Drain Current Model Considering Energy Transport And Self-Heating For Short-Channel Fully Depleted Soi/Nmos Devices With Lightly Doped Drain Structure Biased In Strong Inversion
(Article)
Subject:
Silicon Devices
Author:
S.C
Lin
page:
2193
-
2203
Oxide Roughness Effect On Tunneling Current Of Mos Diodes
(Article)
Subject:
Silicon Devices
Author:
B. C.
Hsu
page:
2204
-
2208
Analytical Subthreshold Surface Potential Model For Pocket N-Mosfets
(Article)
Subject:
Silicon Devices
Author:
Y. S.
Pang
page:
2209
-
2216
Polycrystalline Silicon Thin-Film Transistors Fabricated By Defect Reduction Methods
(Article)
Subject:
Silicon Devices
Author:
H.
Watakabe
page:
2217
-
2221
Multiple-Gate Soi Mosfets: Device Design Guidelines
(Article)
Subject:
Silicon Devices
Author:
J
Park
page:
2222
-
2229
Temperature Dependence Of 1/F Noise In Polysilicon-Emitter Bipolar Transistors
(Article)
Subject:
Silicon Devices
Author:
E.
Zhao
page:
2230
-
2236
Performance Enhancement Of Strained-Si Mosfets Fabricated On A Chemical-Mechanical-Polished Sige Substrate
(Article)
Subject:
Silicon Devices
Author:
N.
Sugii
page:
2237
-
2243
Experimental Evidence Of Tbd Power-Law For Voltage Dependence Of Oxide Breakdown In Ultrathin Gate Oxides
(Article)
Subject:
Silicon Devices
Author:
A
Vayshenker
E. Y.
Wu
page:
2244
-
2253
A Comprehensive Study Of Indium Implantation-Induced Damage Indeep Submicrometer Nmosfet: Device Characterization And Damage Assessment
(Article)
Subject:
Silicon Devices
Author:
H. E
Liao
page:
2254
-
2262
High Performance 35 Nm Gate Length Cmos With No Oxynitride Gate Dielectric And Ni Salicide
(Article)
Subject:
Silicon Devices
Author:
S
Inaba
page:
2263
-
2270
The Partial Silicon-On-Insulator Technologyfor Rf Power Ldmosfet Devices And On-Chip Microinductors
(Article)
Subject:
Silicon Devices
Author:
C.
Ren
J.
Cai
page:
2271
-
2278
Active Devices Under Cmos 1/O Pads
(Article)
Subject:
Silicon Devices
Author:
K. Y.
Chou
page:
2279
-
2287
Direct-Tunneling Gate Leakage Current In Double-Gate And Ultrathin Body Mosfets
(Article)
Subject:
Silicon Devices
Author:
L
Chang
K
Yang
page:
2288
-
2295
Fully-Depleted Soi Cmosfets With The Fully-Silicided Source/Drain Structure
(Article)
Subject:
Silicon Devices
Author:
T.
Ichimori
page:
2296
-
2300
Direct Observation Of Secondary Ionization Current In N-Channel Mosfets
(Article)
Subject:
Solid-State Device Phenomena
Author:
A.
Mihnea
page:
2301
-
2307
Large Area, Ultra-High Voltage 4h-Sic P-I-N- Rectifiers
(Article)
Subject:
Solid-State Power And High Voltage
Author:
R
Singh
page:
2308
-
2316
Spectral Detection Of Metal Contaminants In Water Using An On-Chip Microglow Discharge
(Article)
Subject:
Solid-State Sensors And Actuators
Author:
C. G.
Wilson
page:
2317
-
2322
Fabrication And Characterization Of Polycrystalline Sic Resonators
(Article)
Subject:
Solid-State Sensors And Actuators
Author:
S.
Roy
page:
2323
-
2332
Silicon Field Emission Arrays With Atomically Sharp Tips: Turn-On Voltage And The Effect Of Tip Radius Distribution
(Article)
Subject:
Vacuum Electron Devices
Author:
M.
Ding
page:
2333
-
2342
Suppression Of Boron Ted By Low Temperature Spc Anneal Prior To Dopant Activation
(Article)
Subject:
Suppression
,
Temperature
,
Dopant
,
Activation
Author:
H.
Takeuchi
page:
2343
-
2344
An Engineering Method To Extract Equivalent Oxide Thickness And Its Extension To Chanel Mobility Evaluation
(Article)
Subject:
Extracting
,
Equivalent System Technique
,
Oxide Thickness
,
Extension Principle
Author:
F.
Ootsuka
page:
2345
-
2348
Avalanche Multiplication And Breakdown In Alx Gai-X As (X-<0.9)
(Article)
Subject:
Avalanche Multiplication
,
Breakdown Voltage
Author:
B. K.
Ng
page:
2349
-
2351
A Silicon Thermal Astable Multivibrator For Flow And Temperature Sensing
(Article)
Subject:
Silicon Devices
,
Thermal Analysis
,
Multivariable System
Author:
S. K.
Gamage
page:
2355
-
2358
A Method For Forming Low Resistance Contact To P-Cdte
(Article)
Subject:
Method For Forming
,
Low Resistance Contact
Author:
B.L.
Ghosh
J. K
Mondal
page:
2355
-
2358
Device Characteristics Of The 3-D Bicmos Technology Using Selective Epitaxial Growth And Lateral Solid Phase Epitaxy
(Article)
Subject:
Device Characterization
,
Bicmos
,
Lateral Flow
,
Solid State
Author:
M.J
Kumar
H
Liu
page:
2359
-
2361
A New Model For Avalanche Build-Up Of Carriers In A Sagcm Avalanche Photodiode
(Article)
Subject:
Avalanche Photodiodes
Author:
N. C
Das
M.J.
Deen
page:
2367
-
2370
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