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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 12

A Novel Temperature-Dependent Large-Signal Model Of Heterojunction Bipolar Transistor With A Unified Approach For Self-Heating And Ambient Temperature Effects (Article)
Subject: Compound Semiconductor Devices
Author: H.M Park     
page:      2099 - 2106
A Study Of Low-Bias Photocurrent Gradient Of Avalanche Photodiodes (Article)
Subject: Optoelectronics, Displays And Imaging
Author: S Wang     
page:      2107 - 2113
Boundary Effects On Multiplication Noise In Thin Heterostructure Avalanche Photodiodes: Theory And Experiment (Article)
Subject: Optoelectronics, Displays And Imaging
Author: M M Hayat     
page:      2114 - 2123
Design Of An Organic Pixel Addressing Circuit For An Active-Matrix Olded Display (Article)
Subject: Optoelectronics, Displays And Imaging
Author: W. F. Aerts     
page:      2124 - 2130
On The Weibull Shape Factor Of Intrinsic Breakdown Of Dielectric Films And Its Accurate Experimental Determination Part I: Theory, Methodology, Experimental Techniques (Article)
Subject: Reliability
Author: Y Wu      R. P Vollertsen     
page:      2131 - 2140
On The Weibull Shape Factor Of Intrinsic Breakdown Of Dielectric Films And Its Accurate Experimental Determination Part Ii: Experimental Results And The Effects Of Stress Conditions (Article)
Subject: Reliability
Author: J Sune     
page:      2141 - 2150
A New 'Mixed-Mode' Reliability Degradation Mechanism In Advanced Si And Sige Bipolar Transistors (Article)
Subject: Reliability
Author: G Zhang     
page:      2151 - 2156
Hot-Carrier-Induced Degradation For Partially Depleted Soi 0.25-0.1 Um Cmosfet With 2-Nm Thin Gate Oxide (Article)
Subject: Reliability
Author: W. K. Yeh     
page:      2157 - 2162
Effect Of Cf4 Plasma Pretreatment On Low Temperature Oxides (Article)
Subject: Reliability
Author: Y. T Chang     
page:      2163 - 2171
Analysis Of Nonuniform Esd Current Distribution In Deep Submicron Nmos Transtor (Article)
Subject: Silicon Devices
Author: K. H. Oh     
page:      2171 - 2182
Impact Of Gate-To-Contact Spacing On Esd Performance Of Salicided Deep Submicron Nmos Transistors (Article)
Subject: Silicon Devices
Author: K. H. Oh     
page:      2183 - 2192
Closed-Form Analytical Drain Current Model Considering Energy Transport And Self-Heating For Short-Channel Fully Depleted Soi/Nmos Devices With Lightly Doped Drain Structure Biased In Strong Inversion (Article)
Subject: Silicon Devices
Author: S.C Lin     
page:      2193 - 2203
Oxide Roughness Effect On Tunneling Current Of Mos Diodes (Article)
Subject: Silicon Devices
Author: B. C. Hsu     
page:      2204 - 2208
Analytical Subthreshold Surface Potential Model For Pocket N-Mosfets (Article)
Subject: Silicon Devices
Author: Y. S. Pang     
page:      2209 - 2216
Polycrystalline Silicon Thin-Film Transistors Fabricated By Defect Reduction Methods (Article)
Subject: Silicon Devices
Author: H. Watakabe     
page:      2217 - 2221
Multiple-Gate Soi Mosfets: Device Design Guidelines (Article)
Subject: Silicon Devices
Author: J Park     
page:      2222 - 2229
Temperature Dependence Of 1/F Noise In Polysilicon-Emitter Bipolar Transistors (Article)
Subject: Silicon Devices
Author: E. Zhao     
page:      2230 - 2236
Performance Enhancement Of Strained-Si Mosfets Fabricated On A Chemical-Mechanical-Polished Sige Substrate (Article)
Subject: Silicon Devices
Author: N. Sugii     
page:      2237 - 2243
Experimental Evidence Of Tbd Power-Law For Voltage Dependence Of Oxide Breakdown In Ultrathin Gate Oxides (Article)
Subject: Silicon Devices
Author: A Vayshenker      E. Y. Wu     
page:      2244 - 2253
A Comprehensive Study Of Indium Implantation-Induced Damage Indeep Submicrometer Nmosfet: Device Characterization And Damage Assessment (Article)
Subject: Silicon Devices
Author: H. E Liao     
page:      2254 - 2262
High Performance 35 Nm Gate Length Cmos With No Oxynitride Gate Dielectric And Ni Salicide (Article)
Subject: Silicon Devices
Author: S Inaba     
page:      2263 - 2270
The Partial Silicon-On-Insulator Technologyfor Rf Power Ldmosfet Devices And On-Chip Microinductors (Article)
Subject: Silicon Devices
Author: C. Ren      J. Cai     
page:      2271 - 2278
Active Devices Under Cmos 1/O Pads (Article)
Subject: Silicon Devices
Author: K. Y. Chou     
page:      2279 - 2287
Direct-Tunneling Gate Leakage Current In Double-Gate And Ultrathin Body Mosfets (Article)
Subject: Silicon Devices
Author: L Chang      K Yang     
page:      2288 - 2295
Fully-Depleted Soi Cmosfets With The Fully-Silicided Source/Drain Structure (Article)
Subject: Silicon Devices
Author: T. Ichimori     
page:      2296 - 2300
Direct Observation Of Secondary Ionization Current In N-Channel Mosfets (Article)
Subject: Solid-State Device Phenomena
Author: A. Mihnea     
page:      2301 - 2307
Large Area, Ultra-High Voltage 4h-Sic P-I-N- Rectifiers (Article)
Subject: Solid-State Power And High Voltage
Author: R Singh     
page:      2308 - 2316
Spectral Detection Of Metal Contaminants In Water Using An On-Chip Microglow Discharge (Article)
Subject: Solid-State Sensors And Actuators
Author: C. G. Wilson     
page:      2317 - 2322
Fabrication And Characterization Of Polycrystalline Sic Resonators (Article)
Subject: Solid-State Sensors And Actuators
Author: S. Roy     
page:      2323 - 2332
Silicon Field Emission Arrays With Atomically Sharp Tips: Turn-On Voltage And The Effect Of Tip Radius Distribution (Article)
Subject: Vacuum Electron Devices
Author: M. Ding     
page:      2333 - 2342
Suppression Of Boron Ted By Low Temperature Spc Anneal Prior To Dopant Activation (Article)
Subject: Suppression , Temperature , Dopant , Activation
Author: H. Takeuchi     
page:      2343 - 2344
An Engineering Method To Extract Equivalent Oxide Thickness And Its Extension To Chanel Mobility Evaluation (Article)
Subject: Extracting , Equivalent System Technique , Oxide Thickness , Extension Principle
Author: F. Ootsuka     
page:      2345 - 2348
Avalanche Multiplication And Breakdown In Alx Gai-X As (X-<0.9) (Article)
Subject: Avalanche Multiplication , Breakdown Voltage
Author: B. K. Ng     
page:      2349 - 2351
A Silicon Thermal Astable Multivibrator For Flow And Temperature Sensing (Article)
Subject: Silicon Devices , Thermal Analysis , Multivariable System
Author: S. K. Gamage     
page:      2355 - 2358
A Method For Forming Low Resistance Contact To P-Cdte (Article)
Subject: Method For Forming , Low Resistance Contact
Author: B.L. Ghosh      J. K Mondal     
page:      2355 - 2358
Device Characteristics Of The 3-D Bicmos Technology Using Selective Epitaxial Growth And Lateral Solid Phase Epitaxy (Article)
Subject: Device Characterization , Bicmos , Lateral Flow , Solid State
Author: M.J Kumar      H Liu     
page:      2359 - 2361
A New Model For Avalanche Build-Up Of Carriers In A Sagcm Avalanche Photodiode (Article)
Subject: Avalanche Photodiodes
Author: N. C Das      M.J. Deen     
page:      2367 - 2370